13

Formation of precipitates in heavily boron doped 4H-SiC

Year:
2006
Language:
english
File:
PDF, 336 KB
english, 2006
16

Solubility limits of dopants in 4H–SiC

Year:
2003
Language:
english
File:
PDF, 263 KB
english, 2003
25

Ion implantation induced defects in ZnO

Year:
2012
Language:
english
File:
PDF, 379 KB
english, 2012